High-Response i-InAs/n-GaAs Quantum-Dot Infrared Photodetector with No Current Blocking Barrier

InAs quantum dot infrared photodetectors with In0.15Ga0.85As strain-relief cap layers

As a potential candidate for mid-infrared ~3–5 mm! and far-infrared ~8–14 mm! photon detection, the quantum dot infrared photodetector ~QDIP! has been the subject of extensive research efforts in recent years. Normal-incidence QDIPs with n-n-n and n-i-n vertical configurations have been reported. Compared with quantum well infrared photodetectors, QDIPs are sensitive to normal-incidence infrare...

Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors

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Broadband InGaAs-capped InAs/GaAs quantum-dot infrared photodetector with Bi- modal dot height distributions

“N” structure for type-II superlattice photodetectors

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Multi-color tunneling quantum dot infrared photodetectors operating at room temperature

Quantum dot structures designed for multi-color infrared detection and high temperature (or room temperature) operation are demonstrated. A novel approach, tunneling quantum dot (T-QD), was successfully demonstrated with a detector that can be operated at room temperature due to the reduction of the dark current by blocking barriers incorporated into the structure. Photoexcited carriers are sel...